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| savantic semiconductor product specification silicon pnp power transistors 2SB1052 d escription with to-220fa package complement to type 2sd1480 low collector saturation voltage applications for power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector -emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current -2 a i cm collector current-peak -4 a t a =25 2.0 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1052 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -2.0 v v be base-emitter on voltage i c =-1a ; v ce =-4v -1.2 v i ces collector cut-off current v ce =-60v; v be =0 -0.2 ma i ceo collector cut-off current v ce =-30v; i b =0 -0.3 ma i ebo emitter cut-off current v eb =-6v; i c =0 -1.0 ma h fe-1 dc current gain i c =-0.1a ; v ce =-4v 35 h fe-2 dc current gain i c =-1a ; v ce =-4v 40 250 switching times t on turn-on time 0.1 s t stg storage time 1.5 s t f fall time i c =-1a ;i b1 =-i b2 =-0.1a 0.3 s h fe-2 classifications r q p 40-90 70-150 120-250 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1052 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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